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APTGT100A120D1G
Phase Leg Trench + Field Stop IGBT Power Module
Q1 4 5 Q2 6 7 3
VCES = 1200V IC = 100A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M5 power connectors Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 150 100 200 20 520 200A@1100V Unit V A V W
December, 2009 1-4 APTGT100A120D1G - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT100A120D1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 100A Tj = 125C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 3 2.1 6.5 300 Unit mA V V nA
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=100A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 7.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A RG = 7.5 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C RG = 7.5 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 7 0.4 0.33 950 250 90 550 130 300 100 650 180 7.5 mJ 17.5 400 A ns Max Unit nF nC
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 600V IF = 100A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
di/dt =2000A/s
Min 1200
Typ
Max 250 500
Unit V A A
December, 2009 2-4 APTGT100A120D1G - Rev 1
100 1.6 1.6 170 280 9 18 5 9
2.1
V ns C mJ
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APTGT100A120D1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M5 M6 IGBT Diode 4000 -40 -40 -40 2 3 Min Typ Max 0.24 0.48 150 125 125 3.5 5 180 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D1 Package outline (dimensions in mm)
Typical Performance Curve
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50 40
ZCS VCE=600V D=50% RG=7.5 TJ=125C TC=75C
Forward Characteristic of diode 200
150 IC (A)
30
ZVS
100
20 10 0 0 20 40 60 80 IC (A) 100 120 140
Hard switching
50
TJ=125C TJ=25C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-4
APTGT100A120D1G - Rev 1
December, 2009
APTGT100A120D1G
Output Characteristics (VGE=15V) Output Characteristics 200
TJ = 125C VGE=17V VGE=13V VGE=15V
200
TJ=25C TJ=125C
150
IC (A)
150 IC (A)
100
100
VGE=9V
50
50
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
200
Transfert Characteristics 35
TJ=25C
Energy losses vs Collector Current 30
VCE = 600V VGE = 15V RG = 7.5 TJ = 125C
150
TJ=125C
Eoff Eon
25 E (mJ) 20 15 10 5
IC (A)
100
Err
50
0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 8 16 24 32 40 Gate Resistance (ohms) 48
Err VCE = 600V VGE =15V IC = 100A TJ = 125C Eon Eoff
0 0 25 50 75 100 125 150 175 200 IC (A) Reverse Bias Safe Operating Area 240 200 160 IC (A) 120 80 40 0 0 400 800 VCE (V) 1200 1600
VGE=15V TJ=125C RG=7.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.9 0.2 0.15 0.1 0.05 0.7 0.5
IGBT
0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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4-4
APTGT100A120D1G - Rev 1
December, 2009
0.3

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